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| inchange semiconductor isc product specification isc silicon npn darlington power transistor BU180 description collector current -i c = 10a dc current gain- : h fe = 200(min)@ i c = 5a low collector saturation voltage applications designed for line operated switchmode applications such as: switching regulators inverters solenoid and relay drivers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 320 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 8 v i c collector current-continuous 10 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor BU180 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ;i b =0 200 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 20ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 20ma b 2.0 v i ceo collector cutoff current v ce = 200v; i b = 0 1.0 ma i cbo collector cutoff current v cb = 320v;i e = 0 1.0 ma i ebo emitter cutoff current v eb = 8v; i c =0 10 ma h fe dc current gain i c = 5a; v ce = 5v 200 isc website www.iscsemi.cn 2 |
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